A COMPLEMENTARY III-V HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR TECHNOLOGY FOR HIGH-TEMPERATURE INTEGRATED-CIRCUITS

A complementary III-V heterostructure field effect transistor (CHFET) has been developed which employs a high aluminium mole fraction alumin ium gallium arsenide (Al0.75GaAs) interfacial layer between the gate m etallization and the indium gallium arsenide In0.25GaAs channel. This produces a quasi-insulating gate structure which reduces the gate leak age current. Experimental and simulation data have been used to show t he potential of the CHFET up to temperatures of 500 degrees C. Compute r modelling has also been used to study the role of the heterostructur e component parts, which has revealed the relative importance of each material in the successful operation of high temperature electronic de vices and facilitated the prediction of further device improvements.