METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN

Authors
LU DC WANG D WANG XH LIU XL DONG JR GAO WB LI CJ LI YY
Citation
Dc. Lu et al., METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 58-60
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
29
Issue
1-3
Year of publication
1995
Pages
58 - 60
Database
ISI
SICI code
0921-5107(1995)29:1-3<58:MCGOG>2.0.ZU;2-9
Abstract
Single-crystal GaN films have been deposited on (01 (1) over bar 2) sa pphire substrates using trimethylgallium (TMGa) and NH3 as sources. Th e morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration ofundoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.