FABRICATION AND PROPERTIES OF HIGH-RESISTIVITY POROUS SILICON-CARBIDEFOR SIC POWER DEVICE PASSIVATION

An important advantage of silicon carbide as a material for power elec tronics is its extremely high electric field strength. The practical u se of this advantage requires the elimination of regions of high elect ric field concentration in the design of power devices and efficient d evice passivation. Little is known, however, about methods suitable fo r the passivation of SiC power devices. In this paper we highlight the use of high resistivity porous silicon carbide formed by photo-assist ed anodization of SiC in HF-based solutions as a possible surface pass ivant.