EFFECTS OF AR AND H-2 ANNEALING ON THE ELECTRICAL-PROPERTIES OF OXIDES ON 6H SIC

We report on the influence of po st-oxidation annealing (POA) on the e lectrical properties of metal-oxide-semiconductor capacitors fabricate d on n- and p-type 6H SIC (Si face). All samples were oxidized in dry or wet oxygen at 1150 degrees C. POA at this temperature reduces the d ensities of fixed oxide charges and interface states. Negative fixed o xide charges on n-type SiC were found to be located at the SiO2-SiC in terface. High temperature H-2 annealing experiments show that hydrogen plays a critical role in the SiO2-SiC system. Oxide defects on p-type SiC, which are believed to result from dopant (Al) incorporation in S iO2, could be passivated by annealing in forming gas.