CARBONIZATION OF SI SURFACES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

The carbonization of Si(100) surfaces exposed to a sublimed carbon bea m at low substrate temperatures in a molecular beam epitaxy system was studied. Different carbon sublimation rates and substrate temperature s were used. The films were analyzed using in situ (reflected high ene rgy electron diffraction and Auger surface analysis) and ex-situ (scan ning electron microscopy and Fourier transform IR spectroscopy) method s. The results of the analysis showed that single-crystalline beta-SiC can be grown by this technique. In addition, the Si-to-SiC conversion temperature limit was determined to be 600-650 degrees C which is the lowest reported value, regardless of the growth method.