DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED SILICON-CARBIDE

In the present study we investigated damage production and annealing i n 6H SiC wafers implanted with 230 keV Ga+ ions in a wide dose range a t various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RES) channeling technique and by tr ansmission electron microscopy. From the RES spectra the depth distrib utions of the defect density n(pd)(z) were calculated and are compared with profiles of the nuclear deposited energy density obtained by TRI M87. The results show a rapid accumulation of damage up to amorphizati on with increasing ion fluence for implantation temperatures below 573 K. At temperatures higher than 700 K amorphization obviously is avoid ed. The structure of layers implanted with higher ion fluences at temp eratures above 500 K differs from that of layers produced at lower imp lantation temperatures.