A. Heft et al., DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 142-146
In the present study we investigated damage production and annealing i
n 6H SiC wafers implanted with 230 keV Ga+ ions in a wide dose range a
t various temperatures. Analysis of the implanted layers was performed
by the Rutherford backscattering (RES) channeling technique and by tr
ansmission electron microscopy. From the RES spectra the depth distrib
utions of the defect density n(pd)(z) were calculated and are compared
with profiles of the nuclear deposited energy density obtained by TRI
M87. The results show a rapid accumulation of damage up to amorphizati
on with increasing ion fluence for implantation temperatures below 573
K. At temperatures higher than 700 K amorphization obviously is avoid
ed. The structure of layers implanted with higher ion fluences at temp
eratures above 500 K differs from that of layers produced at lower imp
lantation temperatures.