STRUCTURAL AND ELECTRONIC CHARACTERIZATION OF BETA-SIC FILMS ON SI GROWN FROM MONO-METHYLSILANE PRECURSORS

This paper presents the results of an in-depth investigation into the chemical vapour deposition (CVD) growth of beta-SiC on Si from H3Si-CH 3 precursors. In agreement with previous work, we find an onset of CVD growth at substrate temperatures in the order of 750-800 degrees C. H igher temperatures lead to exponentially increasing growth rates until diffusion limitations set in at about 1000 degrees C. The highest qua lity films, with structural characteristics typical of single-crystal material, were deposited at about 1050 degrees C. Substrate pretreatme nts, except for a pre-deposition HF dip, had surprisingly little influ ence on the crystal quality. Films deposited at substrate temperatures lower than 1000 degrees C exhibited substantially broader IR absorpti on peaks and a higher degree of misorientation than those deposited at high temperature.