DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION

Authors
KUZNETSOV NI ZUBRILOV AS
Citation
Ni. Kuznetsov et As. Zubrilov, DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 181-184
Citations number
16
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
29
Issue
1-3
Year of publication
1995
Pages
181 - 184
Database
ISI
SICI code
0921-5107(1995)29:1-3<181:DCAEI4>2.0.ZU;2-7
Abstract
We have performed electrical and optical measurements to characterize the processes of radiative recombination of carriers for 4H-SiC p-n(+) junctions. We have detected three levels in the band gap, using capac itance and current deep-level transient spectroscopy, which are respon sible for the bands observed in the electroluminescence spectra. We as sume that the HK1 center with an activation energy of E(V) + 0.229 eV and a hole capture cross-section of 8 x 10(-13) (300/T)(3) is related to the Al acceptor level.