HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V

Authors
ANDREEV AN ANIKIN MM ZELENIN VV IVANOV PA LEBEDEV AA RASTEGAEVA MG SAVKINA NS STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation
An. Andreev et al., HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 190-193
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
29
Issue
1-3
Year of publication
1995
Pages
190 - 193
Database
ISI
SICI code
0921-5107(1995)29:1-3<190:HSSFTV>2.0.ZU;2-P
Abstract
Voltage stabilitrons based on 6H-SiC p-n structures produced by the op en-system sublimation technique have been fabricated. Stabilization vo ltages were in the range 4-50 V. Operating currents were from 1 to 100 mA. Differential resistance was in the range 10-20 Ohm at 100 mA curr ent. Upper ambient temperature was 300 degrees C.