MACRODEFECT FORMATION IN SEMICONDUCTORS DURING HIGH-ENERGY ION-IMPLANTATION - MONTE-CARLO SIMULATION OF DAMAGE DEPTH DISTRIBUTIONS

A quantitative model describing macrodefect formation during ion impla ntation in the energy region 0.1-1.0 MeV amu(-1) has been proposed on the basis of the Coulomb explosion approach. In the presented model, ( i) the ionization cross-sections were calculated using realistic atomi c configurations and velocity distributions of electrons in the target ; and (ii) the distribution of the space charge formed was calculated in the classical approximation of ion-electron interactions. Calculate d damage depth distributions were in good agreement with those obtaine d by luminescent centre measurements in diamond and observed by cross- section transmission electron microscopy of Si.