The reaction/diffusion kinetics of Ag/As33S67 film couples are investi
gated. Optical reflection is used to monitor the growth of the Ag-As-S
reaction product layer stimulated by heating and white light illumina
tion. Arrhenius plots indicate a thermally activated process with acti
vation energies (E(A)) of 1.4eV during dark annealing and 0.2eV for an
nealing in combination with white illumination. Additionally, interfer
ometric reflection was demonstrated as an appropriate technique for mo
nitoring the Ag-As-S layer growth during thermal dissolution-the prese
nce of sinusoidal oscillations suggesting that the reacted (Ag-As-S) l
ayer remains distinct throughout the process. In this case a clear squ
are-root time dependence associated with a diffusion controlled proces
s was identified.