COMPUTER-SIMULATION OF SPUTTERING AND ATOMIC REDISTRIBUTION IN HG0.8CD0.2TE TARGETS UNDER AR+ IONS BOMBARDMENT

The sputtering of Hg0.8Cd0.2Te target by low energy Ar+ ions has been simulated using Monte Carlo method. The simulation results show that t he concentration of Hg in the surface region of the target after ion b ombardment is lower than the one before ion bombardment, but in a deep er region an excess concentration of Hg is produced due to recoil impl antation. The excess concentration of Hg there may act as a donor dopa nt diffusion source for over doping the acceptor levels in the adjacen t region and turn the p-type Hg0.8Cd0.2Te into an n-type material.