CRITICAL EXPONENT OF THE ELECTRICAL-CONDUCTIVITY IN THE PARACOHERENCEREGION OF A THIN-FILM OF YBA2CU3O7-X

Citation
Mk. Marhas et al., CRITICAL EXPONENT OF THE ELECTRICAL-CONDUCTIVITY IN THE PARACOHERENCEREGION OF A THIN-FILM OF YBA2CU3O7-X, Bulletin of Materials Science, 17(6), 1994, pp. 585-594
Citations number
22
Categorie Soggetti
Material Science
ISSN journal
02504707
Volume
17
Issue
6
Year of publication
1994
Pages
585 - 594
Database
ISI
SICI code
0250-4707(1994)17:6<585:CEOTEI>2.0.ZU;2-T
Abstract
Critical exponent of the electrical conductivity in the paracoherence region (gamma) of the high temperature superconductor YBa2Cu3O7-x (YBC O) has been estimated for high quality thin film on ZrO2 substrate pre pared by high pressure oxygen sputtering. High energy ion irradiation was carried out using 100 MeV O-16(7+) ions at liquid nitrogen to see the effects of disorder on the value of the exponent. The critical exp onent from a value of about 2 to 1.62 upon irradiation. Studies were a lso carried film to see the effect of ageing and annealing.