SUCCESSIVELY PULSE PLATED CADMIUM SELENIDE FILMS AND THEIR PHOTOELECTROCHEMICAL BEHAVIOR

In successive pulse plating, the pulse deposition is repeated after a definite duration of plating preceded by a mild cleaning of the electr ode and with a fresh deposition bath for the same duration. In this st udy, CdSe films were deposited on Ti substrates by successive pulse pl ating from a bath containing CdSO4 and SeO2 at a current density of 80 mA cm(-2) and a duty cycle of 3.3% for a duration of 30 min. The film s heat-treated to 550 degrees C for 20 min in argon atmosphere, were p olycrystalline with a hexagonal structure. At an illumination of 60 mW cm(-2), a conversion efficiency of 4.5% for the photoetched film and 1.7% for the chemically etched one were determined.