MODELING THE SIMULTANEOUS PROCESS OF FORM ATION OF SILYCIDES AND HIDDEN INSULATING SI3N4 LAYERS IN THE REGIME OF HIGH-INTENSE ION-IMPLANTATION

Citation
Af. Komarov et al., MODELING THE SIMULTANEOUS PROCESS OF FORM ATION OF SILYCIDES AND HIDDEN INSULATING SI3N4 LAYERS IN THE REGIME OF HIGH-INTENSE ION-IMPLANTATION, Zurnal tehniceskoj fiziki, 64(9), 1994, pp. 136-143
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00444642
Volume
64
Issue
9
Year of publication
1994
Pages
136 - 143
Database
ISI
SICI code
0044-4642(1994)64:9<136:MTSPOF>2.0.ZU;2-A