Ss. Fouad et al., A NEW APPROACH TO THE CORRELATION OF THE ELECTRICAL-PROPERTIES WITH INTERBAND AND INTRABAND TRANSITIONS OF THIN CR FILMS, Physica status solidi. b, Basic research, 187(1), 1995, pp. 99-108
Thin chromium films of thickness ranging from 25 to 80 nm are prepared
by thermal evaporation under a vacuum of 1.33 x 10(-3) Pa. The electr
ical resistivity was inversely proportional to the thickness of the fi
lm. The analysis of the electrical resistivity is treated in the frame
of the effective mean free path theory of size effect developed by Pi
chard et al. Such analysis allows the determination of the mean free p
ath l(o), carrier concentration n(c), relaxation time tau, and Fermi e
nergy E(F). The optical constants, n and k, of chromium thin films are
determined in the spectral range of 200 to 25000 nm. The obtained res
ults agree with the optical conductivities predicted theoretically by
Moruzzi et al. In addition, the values of n(c), sigma(s), l(o), and ta
u obtained electrically are found to match with those obtained optical
ly.