A NEW APPROACH TO THE CORRELATION OF THE ELECTRICAL-PROPERTIES WITH INTERBAND AND INTRABAND TRANSITIONS OF THIN CR FILMS

Thin chromium films of thickness ranging from 25 to 80 nm are prepared by thermal evaporation under a vacuum of 1.33 x 10(-3) Pa. The electr ical resistivity was inversely proportional to the thickness of the fi lm. The analysis of the electrical resistivity is treated in the frame of the effective mean free path theory of size effect developed by Pi chard et al. Such analysis allows the determination of the mean free p ath l(o), carrier concentration n(c), relaxation time tau, and Fermi e nergy E(F). The optical constants, n and k, of chromium thin films are determined in the spectral range of 200 to 25000 nm. The obtained res ults agree with the optical conductivities predicted theoretically by Moruzzi et al. In addition, the values of n(c), sigma(s), l(o), and ta u obtained electrically are found to match with those obtained optical ly.