MOLECULAR-DYNAMICS SIMULATION OF SURFACE RELAXATION FOR TERSOFF-DODSON TYPE (100)SI

Authors
XIA YY TAN CY XING YL YANG H SUN XF GONG B
Citation
Yy. Xia et al., MOLECULAR-DYNAMICS SIMULATION OF SURFACE RELAXATION FOR TERSOFF-DODSON TYPE (100)SI, Chinese Physics Letters, 11(12), 1994, pp. 751-753
Citations number
15
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
11
Issue
12
Year of publication
1994
Pages
751 - 753
Database
ISI
SICI code
0256-307X(1994)11:12<751:MSOSRF>2.0.ZU;2-G
Abstract
Surface relaxation and lattice dynamics of (100) Si have been studied using Tersoff-Dodson type Si potential. The average temperature of the lattice is studied as well. The temperature fluctuates with a frequen cy of 9.5 x 10(12) Hz, that is about the average frequency of the opti cal phonons in Si. The (100) Si surface relaxes inward by 0.86 angstro m, and a reduction of 19% in the first interlayer spacing is found.