CURRENT-INDUCED DEGRADATION IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON - A NOVEL INVESTIGATION TECHNIQUE

Authors
MASINI G DECESARE G PALMA F
Citation
G. Masini et al., CURRENT-INDUCED DEGRADATION IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON - A NOVEL INVESTIGATION TECHNIQUE, Journal of applied physics, 77(3), 1995, pp. 1133-1136
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
3
Year of publication
1995
Pages
1133 - 1136
Database
ISI
SICI code
0021-8979(1995)77:3<1133:CDIBHA>2.0.ZU;2-0