INFLUENCE OF SILICON WATER-SURFACE ORIENTATION ON VERY THIN OXIDE QUALITY

Authors
OHMI T MATSUMOTO K NAKAMURA K MAKIHARA K TAKANO J YAMAMOTO K
Citation
T. Ohmi et al., INFLUENCE OF SILICON WATER-SURFACE ORIENTATION ON VERY THIN OXIDE QUALITY, Journal of applied physics, 77(3), 1995, pp. 1159-1164
Citations number
27
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
3
Year of publication
1995
Pages
1159 - 1164
Database
ISI
SICI code
0021-8979(1995)77:3<1159:IOSWOO>2.0.ZU;2-C