PHOTOCAPACITANCE INVESTIGATION OF THE 2 PHOTOQUENCHING LEVELS IN N-TYPE GAAS CRYSTALS WITH EXCESS ARSENIC ATOMS

Authors
NISHIZAWA J OYAMA Y DEZAKI K
Citation
J. Nishizawa et al., PHOTOCAPACITANCE INVESTIGATION OF THE 2 PHOTOQUENCHING LEVELS IN N-TYPE GAAS CRYSTALS WITH EXCESS ARSENIC ATOMS, Journal of applied physics, 77(3), 1995, pp. 1311-1313
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
3
Year of publication
1995
Pages
1311 - 1313
Database
ISI
SICI code
0021-8979(1995)77:3<1311:PIOT2P>2.0.ZU;2-#