TRANSPARENT-CONDUCTIVE INDIUM TIN OXIDE-FILMS FABRICATED BY ATMOSPHERIC RF PLASMA DEPOSITION TECHNIQUE

Citation
Dh. Lee et al., TRANSPARENT-CONDUCTIVE INDIUM TIN OXIDE-FILMS FABRICATED BY ATMOSPHERIC RF PLASMA DEPOSITION TECHNIQUE, Thin solid films, 291, 1996, pp. 6-9
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
291
Year of publication
1996
Pages
6 - 9
Database
ISI
SICI code
0040-6090(1996)291:<6:TITOFB>2.0.ZU;2-#
Abstract
We report new results on indium tin oxide (ITO) films fabricated on a soda lime silicate (SLS) glass by an atmospheric r.f. plasma mist depo sition process. The ITO films and powders were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and infrared spectrosco py. As-deposited films are uniform, transparent, and conductive. Phase formation, lattice parameters, and binding energies depend on the ind ium-to-tin ratio. When the tin concentration is low, the resultant pha se is a cubic indium oxide. As the tin concentration increases from 0% to 40%, the cubic lattice parameter increases. When the indium concen tration is low, the resultant phase is a tetragonal tin oxide. As the indium concentration increases from 0% to 20%, the tetragonal lattice parameters increase, while the tin binding energies decrease slightly.