Depth profiles of layer systems consisting of different film materials
and having different thicknesses are of great practical importance. M
ultilayer reference coatings of conducting (Ti/Al) and non-conducting
(SiO2/Si3N4) material are analyzed with Auger electron spectroscopy (A
ES) and glow discharge optical emission spectroscopy (GDOES) depth pro
filing. Deposition techniques, physical vapor deposition for Ti/Al lay
ers and plasma-enhanced chemical vapor deposition for SiO2/Si3N4 layer
s, as well as measurement and testing procedures for the determination
of layer thickness such as optical and mechanical stylus and spectros
copic ellipsometry are discussed. GDOES depth profiles in direct curre
nt (d.c.) and radio frequency (r.f.) mode are related to measurements
of crater profiles and compared with line scans and depth profiles per
formed by AES. It is shown that such multilayer reference systems are
appropriate for calibration of depth profiles, i.e. the definition and
the evaluation of the depth resolution at the interface, the determin
ation of sputter rates both for d.c.- and r.f.-GDOES and AES, the opti
mization of the conditions of analysis, and the quantification of anal
ysis itself.