SYNTHESIS AND CHARACTERIZATION OF AMORPHOUS-CARBON NITRIDE FILMS

We report the high-pressure, 1066 Pa (8 Torr), chemical vapor depositi on (CVD) synthesis of amorphous carbon nitride films using a d.c. glow discharge technique. X-ray photoelectron spectroscopy and near edge X -ray absorption fine structure were used to study the him stoichiometr y and bonding as a function of substrate temperature and flux of hydro gen to the growth surface. Experiments show that the film stoichiometr y is constant with substrate temperature up to 600 degrees C, above wh ich film growth was not observed. The addition of small amounts (1.5 a t.%) of molecular hydrogen causes poisoning of film growth. Multiple s p(2) bonding states, with little sp(3) bonding, were present in the fi lms. Scanning electron microscopy of the films reveals an unusual fila mentary growth phase.