P. Hammer et al., ION-BEAM DEPOSITED CARBON NITRIDE FILMS - CHARACTERIZATION AND IDENTIFICATION OF CHEMICAL SPUTTERING, Thin solid films, 291, 1996, pp. 107-111
Carbon nitride films were synthesized by ion beam assisted sputtering.
A graphite target was sputtered by argon or nitrogen ions and the gro
wing film was simultaneously bombarded by a focused nitrogen ion beam
of energies between 100-800 eV at 100 and 400 degrees C. It has been f
ound that film growth occurs only if the ion-to-atom arrival ratio is
smaller than a critical value of about 1.8 and it appears to be almost
independent of the assisting beam energy. This effect, limiting the f
ilm growth, is a consequence of a chemical reaction between carbon and
nitrogen forming volatile CN compounds. Experimental evidence was obt
ained by monitoring the gas evolved during the deposition process with
a quadrupole gas analyzer. The maximum value of nitrogen content meas
ured by Auger electron spectroscopy was about 35 at.%. All films were
investigated by Fourier transform infrared spectroscopy and X-ray phot
oelectron spectroscopy. The latter technique shows a preferential bond
ing of N to sp(3)-hybridized C. Hardness measurements with values up t
o 20 GPa were measured using a depth sensing nanoindenter.