OPTICAL-EMISSION SPECTROSCOPY OF THE PLASMA DURING CVD DIAMOND GROWTHWITH NITROGEN ADDITION

Careful control of the process parameters during CVD diamond synthesis allows growth of diamond films with different morphologies and prefer red orientations, It has been lately shown that the addition of small concentrations of nitrogen to the process gas mixture can change the m orphology of the deposit by favouring the growth of the diamond film i n the [100] direction, On the other hand, higher nitrogen concentratio ns lead to the deterioration of the diamond him quality. The aim of th is work is to correlate nitrogen concentrations in the process gas mix ture to the emission intensities of nitrogen containing radicals (N-2 C-3 Pi(u)-B-3 Pi(g) system and CN B-2 Sigma-X(2) Sigma violet system) and carbon containing radicals (CH A(2) Delta-X(2) Pi system and C-2 S wan system). Scanning Electron Microscopy (SEM) is used to study the i nfluence of nitrogen on the diamond him morphology.