The field emission behavior of diamond-like carbon (DLC) films prepare
d by r.f plasma chemical vapor deposition (r.f.-PACVD) was investigate
d. DLC films were coated on p-type boron-doped Si (100) wafers using a
benzene glow discharge. Nitrogen incorporated DLC films were also pre
pared using mixtures of benzene and nitrogen. In both pure and nitroge
n incorporated DLC films, the electron emission was enhanced by electr
ical breakdown between the anode and the sample surface. After the bre
akdown, the effective work functions were measured in the range from 0
.03 to 0.07 eV. The on-set electric field for emission was dependent o
n the breakdown behavior. We observed a minimum on-set electric held o
f 7 MV m(-1). The emission current was proportional to the number of d
amaged regions caused by the electrical breakdown. Auger electron and
micro-Raman spectroscopy showed that the electrical breakdown induces
the formation of defective SiC compounds in the damaged region. The im
proved emission behavior seems to be attributed to the chemical change
of carbon in the damaged region, in addition to the field enhancement
at the rough surface.