FIELD-EMISSION OBSERVATIONS FROM CVD DIAMOND-COATED SILICON EMITTERS

The self-aligned fabrication of diamond-coated silicon field emitters was performed by a selective chemical vapor deposition of diamond on p -type (100)-oriented silicon followed by argon ion milling of the patt erned structures. Field emission measurements of as-prepared and therm ally as well as hydrogen plasma treated diamond-coated silicon emitter arrays with base diameters ranged from 1.2 to 10 mu m were carried ou t by field emission scanning microscopy with Crm resolution. The appli ed electrical surface field has been varied between 20 and 250 MV m(-1 ). It was found that the combination of thermal and hydrogen plasma tr eatments can substantially improve the electron emission of diamond-co ated silicon emitters. Depending on their base diameter the held emitt ers demonstrated stable electron emission for E > 80-120 MV m(-1). Fow ler-Nordheim analysis for arrays and individual field emitters was per formed.