FE-C-H-FILM GROWTH BY PLASMA-ASSISTED CVD FROM ORGANOMETALLIC PRECURSORS

Plasma activated chemical vapour deposition from two different metal o rganic precursors was used to prepare Fe-C:H films. From the depositio n rates, the film composition, determined by X-ray induced photoelectr on spectroscopy (XPS), and by the analysis of the plasma gas compositi on with quadrupole mass spectroscopy (QMS), conclusions are drawn abou t the fragmentation of the different precursors in the plasma and abou t the deposition mechanism. We found that the deposition strongly depe nds on the degree of fragmentation and the energy of the ions impingin g onto the substrate. For ferrocene (Fe(C5H5)(2)), the films deposited at different bias potentials show a steplike change in the Nm composi tion which can be explained by assuming two different deposition mecha nisms: (1) direct incorporation; and (2) deposition via an adsorption layer of small radicals. For the films deposited from cyclooctatetraen -iron-tricarbonyl (C8H8-Fe-(CO)(3)), the composition of the film is no t changing with bias-potential which can be explained by a complete fr agmentation of the precursor in the plasma.