RESIDUAL-STRESS AND IN-SITU THERMAL-STRESS MEASUREMENT OF ALUMINUM FILM DEPOSITED ON SILICON-WAFER

Residual stresses in aluminum film deposited on a silicon wafer were m easured after annealing and quenching. In all cases, residual stresses were tensile, but slow cooling produced larger stresses than quenchin g. Residual stresses of slow-cooled samples became relaxed after annea ling above 300 degrees C. Film passivation by carbon deposition retard ed the relaxation of residual stress. in-situ X-ray stress measurement revealed that compressive stresses developed in a heating stage and t ensile stresses in a cooling stage. From a scanning electron microscop y observation, it becomes clear that the former contributes to nucleat ion of hillocks and the latter to void formation and growth.