EFFECT OF A PLASMA PROTECTION NET ON RESIDUAL-STRESS IN ALN FILMS DEPOSITED BY A MAGNETRON SPUTTERING SYSTEM

Crystal orientation and residual stress development in AIN films depos ited on borosilicate glass (the thermal expansion coefficient of which is nearly equal to that of AIN) substrates were investigated by X-ray diffraction method. The AIN films were prepared by a conventional pla nar magnetron sputtering system with a plasma protection net under the condition of constant substrate temperature and various nitrogen gas pressures between 0.8 Pa and 13 Pa. We found that the residual stresse s show the same qualitative tendency against the nitrogen gas pressure independent of the use of the plasma protection net. Large tensile re sidual stress was observed at high nitrogen gas pressure and large com pressive residual stress was observed at low gas pressure. When the pl asma protection net was used, residual stresses in the AIN him were sh ifted to the compressive side.