FILTERED CATHODIC VACUUM-ARC (FCVA) DEPOSITION OF THIN-FILM SILICON

We describe the deposition of both amorphous and microcrystalline sili con films using a filtered cathodic vacuum arc (FCVA) system. The film s were grown at deposition rates of between 0.2 and 4 nm s(-1) with su bstrate temperatures between room temperature and 500 degrees C. DC su bstrate biases of 0 to-100 V were used. The microstructures of films g rown in this parameter space have been examined using st combination o f TEM, XRD, RES and EELS. Optical and electronic properties have been investigated using transmission spectroscopy and gap cell probe measur ements. Films with similar to 100 nm crystallites were obtained at mod erate temperature and bias (e.g. similar to 300 degrees C and -50 V). Although these conditions are similar to those used in PECVD reactors [1] to produce microcrystalline films the growth mechanism is quite di fferent as the precursors are silicon ions rather than hydrides and no hydrogen dilution is required.