DEPOSITION OF TITANIUM IN A HOLLOW-CATHODE ARC-DISCHARGE - CORRELATION BETWEEN DEPOSITION CONDITIONS AND FILM PROPERTIES

Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode are evaporation device. The layer growth was monitored in situ by monochromatic ellipsometry. Spectroscopic ellipsometry was used to characterize the as-deposited layers. The results obtained by ellipso metry were compared with those obtained using other thin him diagnosti c techniques, especially X-ray photoelectron spectroscopy and Rutherfo rd backscattering spectrometry (RBS). The integral energy influx to th e substrate was monitored by measuring temperature gradients. The plas ma parameters in front of the substrate were determined by means of La ngmuir-probe measurements and energy resolved mass spectrometry. From the integral energy influx and the plasma parameters, the contribution s of the charge carriers and heat radiation to substrate heating were calculated. Modeling of the ellipsometric measurements shows that the film density is influenced strongly by the deposition conditions. The RES analysis supports the results of ellipsometric studies. There is a strong relation between the energy of the titanium ions striking the substrate and the layer density.