TISI2 PHASE-TRANSFORMATION CHARACTERISTICS ON NARROW DEVICES

Citation
Gl. Miles et al., TISI2 PHASE-TRANSFORMATION CHARACTERISTICS ON NARROW DEVICES, Thin solid films, 291, 1996, pp. 469-472
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
291
Year of publication
1996
Pages
469 - 472
Database
ISI
SICI code
0040-6090(1996)291:<469:TPCOND>2.0.ZU;2-U
Abstract
Accurate prediction of TiSi2 transformation requires test structures w ith small silicided surface areas. To evaluate the area dependence of the C49 to C54 transformation, a new monitor was developed with minima l silicide surface area. Small area structures were found to exhibit a bimodal resistance distribution that was nearly insensitive to proces s transformation conditions. Starvation for C54 nucleation sites resul ted in a high frequency of non-transformation even at high annealing t emperatures. Transmission electron microscopy analysis showed that the Ti silicide in these structures is either C49 or C54 phase, with litt le or no mixed phases present. A cooperative C54 nucleation mechanism is proposed to explain this phenomena. The presence of small quantitie s of a molybdenum impurity such as molybdenum during silicide formatio n has been found to increase the availability of C54 forming nuclei by two orders of magnitude. The molybdenum acts as a catalyst and does n ot require interface mixing or the creation of an amorphous Si layer t o enhance nucleation The addition of molybdenum has been demonstrated to eliminate the bimodal resistance distribution.