CHARACTERIZATION OF PBTIO3 THIN-FILMS DEPOSITED ON PT TI/SIO2/SI SUBSTRATES BY ECR PECVD/

The electron cyclotron resonance plasma enhanced chemical vapor deposi tion (ECR PECVD) method is used to prepare ferroelectric PbTiO3 films. Single-phase perovskite PbTiO3 films with smooth surfaces and fine gr ain size were successfully fabricated on Pt/Ti/SiO2/Si substrates at l ow temperatures of 400-500 degrees C using metal-organic (MO) sources. The chemical compositions, structural phases, surface morphologies, a nd depth profiles of the PbTiO3 thin films were investigated using EDS , XRD, SEM, RBS, and AES. Variations of those properties with process temperature and gas supply ratio are discussed. When the process tempe rature was above 450 degrees C, the stoichiometric perovskite PbTiO3 f ilms could be obtained even though the MO source supply ratio was vari ed in a wide range if the oxygen supply was sufficient.