DAMAGE EVOLUTION AND SURFACE DEFECT SEGREGATION IN LOW-ENERGY ION-IMPLANTED SILICON

We have combined computer simulations and atomic-resolution tunneling microscopy to investigate the kinetics of defect migration during anne aling of ion implanted Si(III)-7x7, Using atomically-clean and flat su rfaces as sinks for bulk point defects introduced by the irradiation, we observe distinct, temperature-dependent surface arrival rates for v acancies and interstitials and we demonstrate that the distinct kineti cs of each type of bulk point defect govern their surface segregation kinetics. A combination of simulation tools provides a detailed descri ption of the processes that underlie the observed temperature-dependen ce of defect migration. (C) 1997 American Institute of Physics.