We have combined computer simulations and atomic-resolution tunneling
microscopy to investigate the kinetics of defect migration during anne
aling of ion implanted Si(III)-7x7, Using atomically-clean and flat su
rfaces as sinks for bulk point defects introduced by the irradiation,
we observe distinct, temperature-dependent surface arrival rates for v
acancies and interstitials and we demonstrate that the distinct kineti
cs of each type of bulk point defect govern their surface segregation
kinetics. A combination of simulation tools provides a detailed descri
ption of the processes that underlie the observed temperature-dependen
ce of defect migration. (C) 1997 American Institute of Physics.