THE TUNNEL THIN-FILM ELECTROLUMINESCENT DEVICE

A new electroluminescent device concept is proposed to achieve low vol tage operation. The device is based on a lattice matched semiconductor /insulator/luminescent layer/insulator/semiconductor structure in whic h, under bias, electrons are injected from the semiconductor into the electroluminescent layer at high energy. This tunnel thin film electro luminescent device is integrable with silicon and suitable for use in very low voltage, high brightness eIectroluminessent displays. Prelimi nary results indicate operation as low as 15 V with a peak brightness of 22 fl. at 24 V. (C) 1997 American Institute of Physics.