ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON

Authors
GUSEV OB KUZNETSOV AN TERUKOV EI BRESLER MS KUDOYAROVA VK YASSIEVICH IN ZAKHARCHENYA BP FUHS W
Citation
Ob. Gusev et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON, Applied physics letters, 70(2), 1997, pp. 240-242
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
2
Year of publication
1997
Pages
240 - 242
Database
ISI
SICI code
0003-6951(1997)70:2<240:REOEAH>2.0.ZU;2-I
Abstract
We have observed strong room-temperature electroluminescence at 1.54 m u m induced by erbium ions in amorphous hydrogenated silicon (a-Si:H). The device consisted of an Al/a-Si:H(Er)/n-c-Si/Al structure. A mecha nism for electronic excitation of the erbium ions in the amorphous mat rix is proposed that is based on defect-related Auger excitation. (C) 1997 American Institute of Physics.