ULTRALOW THRESHOLD AND UNIFORM OPERATION (1.3+ -0.09-MA) IN 1.3-MU-M STRAINED-MQW 10-ELEMENT LASER ARRAYS FOR PARALLEL HIGH-DENSITY OPTICALINTERCONNECTS/

Authors
UOMI K OKA A TSUCHIYA T KOMORI M KAWANO T OISHI A
Citation
K. Uomi et al., ULTRALOW THRESHOLD AND UNIFORM OPERATION (1.3+ -0.09-MA) IN 1.3-MU-M STRAINED-MQW 10-ELEMENT LASER ARRAYS FOR PARALLEL HIGH-DENSITY OPTICALINTERCONNECTS/, IEEE photonics technology letters, 7(1), 1995, pp. 1-3
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
1
Year of publication
1995
Pages
1 - 3
Database
ISI
SICI code
1041-1135(1995)7:1<1:UTAUO(>2.0.ZU;2-Y
Abstract
An ultralow-threshold 1.3-mu m InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW acti ve layer. This array has a record-low threshold current, highly unifor m threshold current characteristics (1.3 +/- 0.09 mA and slope efficie ncy of 0.37 +/- 0.01 W/A), and long-term reliability. This array is su itable as light sources for a parallel high-density optical interconne ction system.