ON THE ASYMMETRICAL ROLE OF INTRINSIC DEFECTS IN THE COMPLEMENTARY OPPOSING OXIDE FORMATION/DISSOLUTION REACTIONS/

Authors
HEFNY MM
Citation
Mm. Hefny, ON THE ASYMMETRICAL ROLE OF INTRINSIC DEFECTS IN THE COMPLEMENTARY OPPOSING OXIDE FORMATION/DISSOLUTION REACTIONS/, Collection of Czechoslovak Chemical Communications, 59(12), 1994, pp. 2579-2582
Citations number
21
Categorie Soggetti
Chemistry
Journal title
Collection of Czechoslovak Chemical Communications → ACNP
ISSN journal
00100765
Volume
59
Issue
12
Year of publication
1994
Pages
2579 - 2582
Database
ISI
SICI code
0010-0765(1994)59:12<2579:OTAROI>2.0.ZU;2-1
Abstract
Rates of chemical dissolution (r) of anodic oxide films on Sb, W, Al, Ti, Zr and Hf were studied as a function of the energy of defect forma tion (E(f)) in the respective oxide. The value of r was estimated from capacitance measurements. The relation between In r and E(f) is linea r. The average value of the symmetry factor (alpha) for the dissolutio n reaction is 0.12. The deviation of alpha from 0.5 indicates that int rinsic defects play an asymmetrical role; in the present case their co nstructive action is about 7 times their destructive action.