THE STUDY OF GAAS FILMS ON SI BY LOW-TEMP ERATURE FLUORESCENCE AND RAMAN-SCATTERING METHODS

Authors
ARTAMONOV VV BACHERIKOV YY LASHKEVICH EG NECHIPORUK BD
Citation
Vv. Artamonov et al., THE STUDY OF GAAS FILMS ON SI BY LOW-TEMP ERATURE FLUORESCENCE AND RAMAN-SCATTERING METHODS, UKRAINSKII FIZICHESKII ZHURNAL, 38(11), 1993, pp. 1643-1650
Citations number
24
Categorie Soggetti
Physics
Journal title
UKRAINSKII FIZICHESKII ZHURNAL → ACNP
ISSN journal
02023628
Volume
38
Issue
11
Year of publication
1993
Pages
1643 - 1650
Database
ISI
SICI code
0202-3628(1993)38:11<1643:TSOGFO>2.0.ZU;2-I
Abstract
Mechanical stresses have been studied for their influence on defects' distribution in GaAs/Si films and on structural properties of GaAs/Si films by the photoluminescent and Raman scattering methods. The GaAs f ilms were grown by MBE method on (100), (111) and (211) oriented subst rates. The dependences of electron-phonon interaction and photolumines cent intrinsic-defect-induced 1.42 eV-band intensity on mechanical str esses were obtained.