X-RAY ELECTRONO-OPTICAL AND SIMS CHARACTERIZATION OF SI CRYSTALS IMPLANTED WITH BI IONS BEFORE AND AFTER RAPID THERMAL ANNEALING

The purpose of the presented paper is to find out what kinds of inform ation on surface layer structure of implanted silicon after rapid ther mal annealing can be acquired by such non-destructive methods as X-ray diffractometry and its complementary RHEED technique. The experiments were performed on Si crystals implanted with Bi ions. The studies sho wed that using the anomalous X-ray transmission of the wavelength of 1 .54 angstrom we are able to determine the defect concentration introdu ced by ion implantation with different doses as well as the effects of defect annealing. It was also shown using the RHEED that the surface layer of ca. 50 angstrom thick remains amorphous after RTA probably du e to the oxidation. The measurements by using SIMS pointed also out th at at the crystal surface there was a small amount of Bi atoms accumul ated after RTA.