SUBSTRATE BIAS EFFECT ON THE CAPTURE KINETICS OF RANDOM TELEGRAPH SIGNALS IN SUBMICRON P-CHANNEL SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

Authors
SIMOEN E CLAEYS C
Citation
E. Simoen et C. Claeys, SUBSTRATE BIAS EFFECT ON THE CAPTURE KINETICS OF RANDOM TELEGRAPH SIGNALS IN SUBMICRON P-CHANNEL SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Applied physics letters, 66(5), 1995, pp. 598-600
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
5
Year of publication
1995
Pages
598 - 600
Database
ISI
SICI code
0003-6951(1995)66:5<598:SBEOTC>2.0.ZU;2-D