IN-SITU FABRICATED GA2O3-GAAS STRUCTURES WITH LOW INTERFACE RECOMBINATION VELOCITY

Authors
PASSLACK M HONG M SCHUBERT EF KWO JR MANNAERTS JP CHU SNG MORIYA N THIEL FA
Citation
M. Passlack et al., IN-SITU FABRICATED GA2O3-GAAS STRUCTURES WITH LOW INTERFACE RECOMBINATION VELOCITY, Applied physics letters, 66(5), 1995, pp. 625-627
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
5
Year of publication
1995
Pages
625 - 627
Database
ISI
SICI code
0003-6951(1995)66:5<625:IFGSWL>2.0.ZU;2-R