DEFECT PROFILING IN MULTILAYERED SYSTEMS USING MEAN DEPTH SCALING

Ghosh et al. recently proposed that positron stopping profiles in elem ents and elemental multilayers, calculated by Monte Carlo for incident positron energies in the range 1-10 keV, may be scaled onto energy in dependent curves using the mean implantation depth. It is shown here t hat Monte Carlo stopping profiles in elemental multilayer systems can be reproduced accurately in the incident energy range 1-25 keV using a modification of this scaling model that takes into account the backsc attering effects of interfaces. The mean depth scaling approach repres ents a saving of several orders of magnitude in the computation time f or multilayer stopping profiles and has been incorporated into a new d efect profiling program POSTRAP6.