Vj. Ghosh et al., DEFECT PROFILING IN ELEMENTAL AND MULTILAYER SYSTEMS - CORRELATIONS OF FITTED DEFECT CONCENTRATIONS WITH POSITRON IMPLANTATION PROFILES, Applied surface science, 85(1-4), 1995, pp. 210-215
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The results of several positron annihilation (Doppler broadening) expe
riments have been analyzed using the BNL Monte Carlo implantation prof
iles and the program VEPFIT. The program VEPFIT has been modified so t
hat scaled, parameterized multilayer profiles can also be used as the
initial condition for the diffusion equation solution. We have looked
at both elemental (e.g. amorphous silicon) and multilayer (e.g. Pd/Si)
systems. Strong correlations between the input implantation profile p
arameters and the fitted values obtained for the diffusion lengths and
overlayer thicknesses for the multilayer systems have been found. The
effect of uncertainties in the mean depth on the value of the diffusi
on length and hence the defect concentrations will be discussed. The i
mpact of reimplanting backscattered positrons on both the implantation
profiles and the fitted diffusion lengths will also be presented.