SLOW POSITRON IMPLANTATION SPECTROSCOPY OF EDGE-DEFINED FILM-FED GROWTH-SILICON

Authors
COLEMAN PG BLOSS E SETZLER S LASHELL S DAVIES G SAWYER WD
Citation
Pg. Coleman et al., SLOW POSITRON IMPLANTATION SPECTROSCOPY OF EDGE-DEFINED FILM-FED GROWTH-SILICON, Applied surface science, 85(1-4), 1995, pp. 276-279
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
85
Issue
1-4
Year of publication
1995
Pages
276 - 279
Database
ISI
SICI code
0169-4332(1995)85:1-4<276:SPISOE>2.0.ZU;2-R
Abstract
An effective diffusion length L(+), of 90 +/- 10 nm has been measured for thermalised positrons in a number of samples of edge-defined film- fed growth (EFG) silicon at room temperature. This value of L(+) is so me three times shorter than that observed in undefected Si, whereas th e characteristic annihilation lineshape parameters associated with EFG and undefected Si are indistinguishable. These results imply that (a) positron diffusion in EFG Si is hampered by shallow trapping by defec ts - probably substitutional C - present at a concentration of about 1 00 ppm, and (b) no open-volume defects were detected.