This paper reports on a GaAs PIN diode SPDT switch design which achiev
es 45 dB of isolation up to 30 GHz. The switch design uses 2-mu m-thic
k i-region PM's, a shunt-shunt-series switch topology in each arm, and
a quasi-coplanar waveguide (CPW) design environment to achieve its su
perior isolation performance. By employing CPW ground isolation with a
microstrip design, as much as 10-dB improvement in isolation performa
nce was observed at the upper band frequencies. The switch achieves 1.
02-dB insertion loss and >15-dB input and output return-loss across th
e band. In comparison to previously reported GaAs MMIC PIN diode switc
hes at millimeter-wave frequencies, this design achieves state-of-the-
art isolation performance.