Polycrystalline diamond films were deposited by electron assisted hot
filament chemical vapor deposition method on (001) Si substrate using
a mixture of propane-butane and hydrogen as working gas. In morphology
investigation of diamond films using scanning electron microscope, it
was found that diamond film morphology is changing from (111), for hy
drocarbon concentration below 0.5 vol.%, via (100) to the so-called ''
ball-like'' structure. The diamond film quality and defect structures
in it were investigated by Raman and electron spin resonance spectrosc
opy for the purpose of obtaining basic knowledge which will aid the gr
owth of defect free epitaxial diamond film for electronic and optical
applications.