LUMINESCENCE OF ZNXMG1-XSE LAYERS OBTAINED BY THERMAL-DIFFUSION OF MGINTO ZNSE AND ZNXMG1-XSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

Authors
BALA W FIRSZT F GLOWACKI G GAPINSKI A DZIK J
Citation
W. Bala et al., LUMINESCENCE OF ZNXMG1-XSE LAYERS OBTAINED BY THERMAL-DIFFUSION OF MGINTO ZNSE AND ZNXMG1-XSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Acta Physica Polonica. A, 87(1), 1995, pp. 161-164
Citations number
5
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
87
Issue
1
Year of publication
1995
Pages
161 - 164
Database
ISI
SICI code
0587-4246(1995)87:1<161:LOZLOB>2.0.ZU;2-7
Abstract
This work deals with the study of photoluminescence properties of ZnxM g1-xSe epilayers grown by molecular beam epitaxy on (001) GaAs and (11 1) ZnTe substrates and ZnxMg1-xSe layers obtained by thermal diffusion of Mg into ZnSe single crystals. Luminescence spectra of ZnxMg1-xSe l asers are dominated by blue and violet emission bands with maxima posi tioned in the range of photon energies: 3.05-3.28 eV, 2.88-3.04 eV, 2. 81 eV and 2.705 eV, depending on preparation conditions. In some sampl es the blue luminescence is observed up to room temperature.