ON SUBBAND MOBILITIES OBSERVED IN DELTA-DOPED ALGAAS GAAS QUANTUM-WELLS AND GAAS-LAYERS/

Electronic transport phenomena in molecular beam epitaxy grown silicon delta-doped AlGaAs/GaAs quantum wells and GaAs layers were investigat ed. Observations of the Shubnikov-de Baas oscillations allowed to dedu ce the redistribution of electrons among energy subbands formed by V-s haped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantu m wells, respectively. In both cases the effects of illumination upon individual subband mobilities and carrier concentrations were studied and the manifestation of the DX centres was demonstrated.